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| STP62NS04Z N-CHANNEL CLAMPED 12.5m - 62A TO-220 FULLY PROTECTED MESH OVERLAYTM MOSFET TYPE STP62NS04Z VDSS CLAMPED RDS(on) <0.015 ID 62 A TYPICAL RDS(on) = 0.0125 100% AVALANCHE TESTED LOW CAPACITANCE AND GATE CHARGE 175 oC MAXIMUM JUNCTION TEMPERATURE 1 3 2 DESCRIPTION This fully clamped Mosfet is produced by using the latest advanced Company's Mesh Overlay process which is based on a novel strip layout. The inherent benefits of the new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest operation conditions such as those encountered in the automotive environment. Any other application requiring extra ruggedness is also recommended. TO-220 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ABS, SOLENOID DRIVERS POWER TOOLS Ordering Information SALES TYPE STP62NS04Z MARKING P62NS04Z PACKAGE TO-220 PACKAGING TUBE ABSOLUTE MAXIMUM RATINGS Symbol VDS VDG VGS ID ID IDG IGS IDM(*) Ptot dv/dt (1) EAS (2) VESD Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Gate Current (continuous) Gate SourceCurrent (continuous) Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy ESD (HBM - C = 100pF, R=1.5 k) Storage Temperature Operating Junction Temperature Value CLAMPED CLAMPED CLAMPED 62 37.5 50 50 248 110 0.74 8 500 8 -55 to 175 (1) ISD 40A, di/dt 100A/s, VDD V(BR)DSS, Tj TJMAX (2) Starting Tj = 25 oC, ID = 20A, VDD= 20V Unit V V V A A mA mA A W W/C V/ns mJ kV C (*) Pulse width limited by safe operating area. March 2004 . 1/8 STP62NS04Z THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose (for 10 sec., 1.6mm from case) Max Max 1.36 62.5 300 C/W C/W C ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF Symbol V(BR)DSS IDSS IGSS VGSS Parameter Clamped Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate-Source Breakdown Voltage Test Conditions ID = 1 mA, VDS = 16 V VGS = 10 V IGS = 100 A 18 VGS = 0 Min. 33 10 10 Typ. Max. Unit V A A V ON (*) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 10 V ID = 250 A ID = 30 A Min. 2 12.5 Typ. Max. 4 15 Unit V m DYNAMIC Symbol gfs (*) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS = 15 V ID=30A Min. Typ. 20 1330 420 135 Max. Unit S pF pF pF VDS = 25V, f = 1 MHz, VGS = 0 2/8 STP62NS04Z ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 20 V ID = 20 A VGS = 10 V RG = 4.7 (Resistive Load, Figure 3) VDD= 20 V ID= 40 A VGS= 10V Min. Typ. 13 104 34 10 11.5 47 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol td(off) tf tr(Voff) tf tc Parameter Turn-off Delay Time Fall Time Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 20 V ID = 20 A VGS = 10 V RG = 4.7 (Resistive Load, Figure 3) Vclamp = 30 V ID = 40 A VGS = 10 V RG = 4.7, (Inductive Load, Figure 5) Min. Typ. 41 42 30 54 90 Max. Unit ns ns ns ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (*) VSD (*) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 62 A VGS = 0 45 65 2.9 Test Conditions Min. Typ. Max. 62 248 1.5 Unit A A V ns nC A ISD = 40 A di/dt = 100A/s Tj = 150C VDD = 20 V (see test circuit, Figure 5) (*)Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. (*)Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/8 STP62NS04Z Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STP62NS04Z Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Breakdown Voltage Temperature. . . 5/8 STP62NS04Z Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STP62NS04Z TO-220 MECHANICAL DATA DIM. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA 0.49 0.61 1.14 1.14 4.95 2.40 10 16.10 13 2.65 15.25 6.20 3.50 3.75 16.40 mm. MIN. 4.4 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.70 10.40 16.73 14 2.95 15.75 6.60 3.93 3.85 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.633 0.511 0.104 0.600 0.244 0.137 0.147 0.645 TYP. MAX. 4.6 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.658 0.551 0.116 0.620 0.260 0.154 0.151 inch. TYP. TYP. 0.181 0.051 0.107 7/8 STP62NS04Z Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics All other names are the property of their respective owners. (c) 2004 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco -Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. www.st.com 8/8 |
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